I want to run an ESP project from three 1.5V batteries and I’m not happy with the full 4.5V on the ESP when the new are new. But as soon as we move down the discharge curve the voltage will stabilize around 3.3V. I’ve got it in my head that I should be able to put an N channel FET in the supply but with drain and source in reverse to the normal convention (source to battery and drain to ESP) so that the internal diode is conducting. This with no connection to the gate will drop me 0.7V so when the batteries are new the voltage is only 3.8V (still a bit high but better).
Now the fun bit, as the voltage drops I want to switch on the FET to short out the diode giving me the full battery voltage to the ESP. Normally to switch on an N channel FET the gate voltage is increased with respect to the source. Is that still the case if the FET is connected in reverse (in which case I need to use a P channel) or should the gate voltage be reduced below the source?
If I can get this to work it will make a nice little self-switching volt dropper for battery applications that increaces efficientcy (it's noted that the ESP draws more current at higher voltages) with no dropout so the full battery reserves can be used.
Thanks in advance.