DrG wrote:Can you explain, in relatively simple terms (because that is likely all that I will understand), the advantage of a MOSFET over a bipolar in this case? I did some reading on IRL540s for power control applications but I am not sure I truly understand the advantage if you drive the bipolar to saturation.
BJTs are current controlled devices. For the transistor to switch on, there needs to be a current flowing through the base. In your application that means you waste 7-8mA, just to drive the transistor.
MosFETs are voltage controlled. They switch on or off, depending on the voltage difference between the source and gate pins. There is no current flowing through the gate (in praxis there is a few nA leakage, but it's so low, you usually don't need to worry about that). When switched on, the mosfet will basically behave like a resistor, whose value depends on the voltage difference between gate & source (that resistance is usually called R_DS(on)). This is usually more power efficient, since a) amount of power you waste in the transistor depends on the current your circuit draws (lower current drawn means less power wasted) and b) the resistance of good mosfets is usually very low (typically 100milliohm or less).